IGBT模块 Littelfuse
相关结果约3437582条
Littelfuse（力特）IXYS功率半导体选型指南
Introduction of Littelfuse IGBT Discretes IGBT Modules Index Symbols and Terms/Nomenclature New Pressfit Pin packages ISOPLUS™ family Power MOSFETs Diodes Thyristors Rectifier Bridges Protection Devices Gate Drivers/Power Relays Diode & Thyristor（IXYS Chippenham） Power Semiconductor Chips/Direct Copper Bonded Ceramic Substrates Application Notes Highlights Outline Drawings
LITTELFUSE - IGBT,IGBT模块,不对称和脉冲晶闸管,中压晶闸管,二极管,二极管模块,交流控制器,保护装置,冷却器,分布式门极晶闸管,制动整流器总成,功率半导体组件,功率半导体附件,功率因数校正模块,功率继电器,功率金氧半电晶体,升压模块,半快二极管,半桥模块,单二极管模块,单晶闸管模块,双二极管模块,双向可控硅,双晶闸管,双极场效应晶体管,双超快二极管,外围组件,大功率声波频率分布,带制动装置的整流桥,快体二极管,快恢复二极管,快恢复二极管二极管,快速二极管整流桥,快速关断晶闸管,快速恢复二极管,快速恢复外延二极管,散热器,整流二极管,整流二极管模块,整流器,整流桥,整流管,晶闸管,晶闸管模块,标准底座夹具套件,棒夹,水冷二极管,相控晶闸管,离散相控晶闸管,箱形夹具,绝缘栅双极晶体管,肖特基,超快恢复二极管,软恢复二极管,配件,门驱动器,雪崩二极管,高频场效应晶体管,34/62MM外壳中的半桥模块,6件装模块,HIPERFRED&NBSP™ 二极管,HIPERFRED2型™ 二极管,HIPERFRED™ 模块,MOSFETS器件,MOSFET模块,P沟道MOSFET,Q3级HIPERFET,SIC肖特基二极管,传统MOSFET,全桥和制动/降压/增压模块,压装式IGBT,压装式IGBT门极驱动单元,声波-FRD™ 二极管,导通二极管（BOD）,快速导通二极管（BOD）,沟道MOSFETS,点火IGBTS,相位支路/CBI模块,线性L2™ 功率金氧半电晶体,耗尽模式MOSFET,肖特基GEN2二极管,超结功率MOSFET,1-FORM-A RELAYS,1-FORM-B RELAYS,6-PACK MODULES,AC CONTROLLER,AC REGULATORS,ACCESSORIES,ASYMMETRIC AND PULSE THYRISTORS,ASYMMETRIC THYRISTORS,AVALANCHE DIODES,BAR CLAMPS,BIMOSFETS,BOOST CHOPPER IGBT MODULES,BOOST MODULES,BOX CLAMPS,BRAKE IGBT MODULES,BRAKE/BUCK/BOOST CHOPPER IGBT MODULES,BRAKING RECTIFIER ASSEMBLIES,BREAK-OVER DIODES,BREAK-OVER DIODES (BOD),BUCK IGBT MODULES,CBI 2 IGBT MODULES,CBI 3 IGBT MODULES,COOLERS,DEPLETION-MODE MOSFETS,DIODE MODULES,DIODES,DIRECT COPPER BONDED CERAMIC SUBSTRATES,DISCRETES PHASE CONTROL THYRISTORS,DISTRIBUTED GATE THYRISTORS,DUAL DIODE MODULES,DUAL SPEED DIGITAL OPTICAL ISOLATOR,DUAL THYRISTOR,DUAL THYRISTOR MODULES,DUAL ULTRAFAST DIODES,EXTRA FAST RECOVERY DIODES,FAST BODY DIODE,FAST BREAK-OVER DIODES,FAST BREAK-OVER DIODES (BOD),FAST PHASE CONTROL THYRISTORS,FAST RECOVERY DIODE,FAST RECOVERY DIODES,FAST TURN OFF THYRISTORS,FAST TURN-OFF THYRISTORS,FAULT PROTECTED RELAYS,FRED,FRED DIODES,FULL BRIDGE AND BRAKE / BUCK / BOOST MODULES,FULL BRIDGE IGBT MODULES,FUSES,GATE DRIVERS,GATE TURN OFF THYRISTORS,GTOS,HALF BRIDGE MODULES,HALF BRIDGE MODULES IN 34/62MM HOUSINGS,HALF CONTROLLED RECTIFIER BRIDGES,HEATSINKS,HIGH POWER SONIC FRD,HIGH SPEED DIGITAL OPTICAL ISOLATORS,HIGH VOLTAGE NPT IGBTS,HIGH VOLTAGE RECTIFIER MODULES,HIPERDYN™ FREDS,HIPERDYN™FREDS,HIPERFETS,HIPERFETS (FBD),HIPERFET（FBD）,HIPERFRED2™ DIODES,HIPERFRED™ DIODES,HIPERFRED™ MODULES,IGBT GATE DRIVER,IGBT HALF BRIDGE MODULES,IGBT MODULES,IGBTS,IGNITION IGBTS,INSULATED GATE BI-POLAR TRANSISTORS,LEGACY MOSFETS,LEGACY POWER MOSFETS,LINEAR L2™ POWER MOSFETS,LINEAR OPTOCOUPLERS,LOW ON-STATE VOLTAGE NPT IGBTS,LOW-SIDE GATE DRIVERS,MEDIUM VOLTAGE THYRISTORS,MISCELLANEOUS RELAYS,MODULES,MOS-GATED THYRISTORS,MOSFET MODULES,MOSFETS,N-CHANNEL DEPLETION MODE FETS,NPT IGBT,OPTICALLY ISOLATED AC POWER SWITCHES,OPTICALLY ISOLATED I2C BUS REPEATERS,OPTICALLY ISOLATED LOAD-BIASED GATE DRIVERS,OPTICALLY ISOLATED PHOTOVOLTAIC GATE DRIVERS,P-CHANNEL MOSFETS,PERIPHERAL COMPONENTS,PHASE CONTROL THYRISTORS,PHASE LEG / CBI MODULES,PHASE LEG IGBT MODULE,PLANAR IGBTS,POLAR™ MOSFETS,POLAR™MOSFET,POWER FACTOR CORRECTION MODULES,POWER MOSFETS,POWER RELAYS,POWER SEMICONDUCTOR,POWER SEMICONDUCTOR ACCESSORIES,POWER SEMICONDUCTOR ASSEMBLIES,POWER SEMICONDUCTOR CHIPS,PRESS-PACK IGBT,PRESS-PACK IGBT GATE DRIVE UNITS,PROTECTION DEVICES,PT IGBTS,PULSE THYRISTORS,Q3-CLASS HIPERFET,RECTIFIER,RECTIFIER BRIDGES,RECTIFIER BRIDGES WITH BRAKE UNIT,RECTIFIER BRIDGES WITH FAST DIODES,RECTIFIER DIODE,RECTIFIER DIODE MODULES,RECTIFIER DIODES,RECTIFIERS,RESETTABLE PTCS,REVERSE CONDUCTING IGBTS,SCHOTTKY DIODES,SCHOTTKY GEN2 DIODES,SEMIFAST DIODES,SEMIFAST DIODES,SIC DIODES,SIC GATE DRIVER,SIC MOSFET,SIC MOSFETS,SIC SCHOTTKY DIODES,SILICON CARBIDE SCHOTTKY DIODES,SILICONCARBIDE POWER MOSFETS,SINGLE DIODE MODULES,SINGLE PHASE DIODE BRIDGES,SINGLE PHASE FULLY CONTROLLED BRIDGES,SINGLE THYRISTOR MODULES,SINGLE-CHANEL EACH DIRECTION DIGITAL OPTICAL ISOLATOR,SIX PHASE DIODE,SIX PHASE THYRISTOR,SIX-PACK IGBT MODULES,SIX-PACK TRENCH MOSFET,SOFT RECOVERY DIODE,SOFT RECOVERY DIODES,SOLID STATE RELAYS,SONIC-FRD™ DIODES,STANDARD BAR CLAMPS,STANDARD BASE CLAMP KITS,STANDARD MOSFETS,SUPERJUNCTION POWER MOSFET,SUPERJUNCTION POWER MOSFETS,THREE PHASE DIODE BRIDGE,THREE PHASE FULLY CONTROLLED BRIDGES,THYRISTOR,THYRISTOR MODULES,THYRISTORS,TRENCH IGBTS,TRENCH MOSFETS,TRENCH POWER MOSFETS,TRIAC,TRIACS,TRIODE-REVERSE CONDUCTING THYRISTOR,TVS DIODES,ULTRA JUNCTION POWER MOSFETS,VERY HIGH VOLTAGE NPT IGBTS,VERY HIGH VOLTAGE POWER MOSFETS,WATER COOLED DIODE,WATER COOLED DIODE MODULES,WATER COOLED DUAL DIODE MODULES,WATER COOLED DUAL THYRISTOR MODULES,WATER COOLED THYRISTOR MODULES,R1280NC25M,MCD 26-16IO1B,N2055HE420,IXTT 30N50L2,R1280NC25K,R1280NC25L,MCD 56-18IO8B,IXBOD 2-52R,R1280NC25J,IXTQ 52N30P,MCK 200-18IO1,IXYR 100N120C3,L,公用事业规模转换器,可再生发电,大中型驱动器,CONSUMER ELECTRONICS,DATA ACQUISITION,DATA COMMUNICATIONS,ELECTRONIC SWITCHING,INDUSTRIAL CONTROLS,INDUSTRIAL FACILITIES,INSTRUMENTATION,LARGE AND MEDIUM DRIVES,MEDICAL EQUIPMENT,MULTIPLEXERS,RENEWABLE GENERATION,SECURITY,TELECOMMUNICATIONS,UTILITIES SCALE CONVERTERS,VEHICLES
技术浅谈：简析IGBT工作时序及门极驱动计算方法
本篇文章简单介绍IGBT工作时序及门极驱动计算方法，引入大电流驱动IC以及门极保护TVS，同时罗列了不同品牌碳化硅MOSFET所耐受驱动电压，借此介绍非对称TVS新产品的实用性。
发布时间 : 2025-03-03
产品变更通知针对Littelfuse离散MOSFET和IGBT器件（LFPCN-DMI-BTA-2025-001/01）
Littelfuse公司发布产品变更通知，宣布对其离散MOSFET和IGBT器件的管装包装材料从PVC更换为PET。此次变更不影响产品外形、尺寸和功能。受影响的器件型号列表见附录B。具体变更描述和受影响型号列表详见附录A和B。
LITTELFUSE - 分立IGBT,离散式MOSFET,DISCRETE IGBT,DISCRETE MOSFET,IXTP15P15T,IXBH16N170,IXFH44N50P
Littelfuse（力特）功率半导体和IC选型指南
IGBT Discretes IGBT Modules Nomenclature Featured Packages Power MOSFET Diodes Breakover Diodes Thyristors Rectifier Modules Solid State Relays Gate Driver ICs High Power Devices Stacks and Accessories Outline Drawings Alphanumeric Index
LITTELFUSE - IGBT,IGBT开关,IGBT模块,三极管,三相二极管桥,三相全控桥,三相整流桥,三相高压整流器模块,不对称和脉冲晶闸管,不对称晶闸管,中压晶闸管,二极管,二极管模块,交流控制器,交流稳压器,传统肖特基,低侧门驱动器集成电路,低功耗驱动器,低端栅极驱动器,光隔离交流电源开关,光隔离光伏栅极驱动器,光隔离负载偏置栅极驱动器,六相二极管,六相可控硅,分布式门极晶闸管,制动整流器总成,功率半导体模块,半快二极管,半桥栅极驱动器,半桥门驱动器集成电路,半波可控硅整流器,单个预安装二极管,单个预装晶闸管,单根同轴电缆,单相二极管桥,单相全控桥,单相整流桥,单相高压整流器模块,单面冷却方形底座安装夹具,双向可控硅,双极结型晶体管,双超快二极管,可控硅,固态开关,固态继电器,地球同步转移轨道,声二极管,导通二极管,开关晶闸管,快恢复二极管,快恢复二极管二极管,快恢复外延二极管,快断二极管,快速二极管,快速关断晶闸管,快速开关晶闸管,快速恢复二极管,快速恢复外延二极管,快速晶闸管,散热器,整流器,整流器模块,整流桥,晶闸管,晶闸管模块,标准晶闸管,标准杆夹,标准杆夹套件,标准相控晶闸管,标准螺旋电缆,棒夹,电源半导体,电源开关,相控晶闸管,硅胶套电缆,碳化硅肖特基二极管,碳化硅肖特基势垒二极管,箱形夹具,线性光耦合器,线路整流器,绝缘栅双极晶体管,继电器,肖特基二极管,肖特基势垒二极管,胶囊装置,膜生物反应器,表面贴装器件,超快恢复二极管,超快超软恢复二极管,软恢复二极管,金属氧化物半导体场效应晶体管,门极可关断晶闸管,门驱动器集成电路,防浪涌电压整流二极管,雪崩二极管,雪崩整流二极管,高功率器件,高压场效应晶体管,高效可控硅,高温双向晶闸管,CBI IGBT模块,FRED模块,GTO晶闸管,HIPERDYN™快恢复二极管,HIPERFRED 2TM二极管,HIPERFRED&NBSP™ 二极管,HIPERFRED™ 模块,IC分割线性光耦合器,IGBT XPT™模块,IGBT离散,IGBT门极驱动器,MOS栅极晶闸管,N沟道耗尽型场效应晶体管,N通道耗尽模式场效应晶体管,POLAR3™高压MOSFET,POLARP3™HIPERFET™功率MOSFET,POLARP3™功率MOSFET,POLARP™P沟道功率MOSFET,POLAR™ 功率MOSFET,POLAR™标准MOSFET,P沟道POLARP™功率MOSFET,P沟道P™功率MOSFET,Q3级HIPERFET™ 功率MOSFET,Q3级HIPERFET™MOSFET,SIC肖特基势垒二极管,SIDAC晶闸管,SONIC-FRDTM二极管,TRENCHP™P沟道功率MOSFET,TRENCHT2TM功率MOSFET,TRENCHT2™ HIPERFET™ 功率MOSFET,XPT™平面IGBT,XPT™沟槽式IGBT,XPT甚高电压IGBT,三相半桥栅极驱动器IC,传统功率MOSFET,光隔离、负载偏置栅极驱动器,六组IGBT模块,制动降压升压斩波器IGBT模块,功率 MOSFET,压力包IGBT,双绞线、硅胶套管电缆,反向导通IGBT,快速XPT™IGBT,扩展FBSOA线性功率MOSFET,控制IC,极化率2™ 功率MOSFET,极高电压NPT IGBT,栅极驱动器ICS,标准MOSFET,标准功率MOSFET,沟道功率MOSFET,甚高电压功率MOSFET,电源IC,第四代XPT™IGBT,索尼克·弗里德,线性™功率MOSFET,耗尽MOSFET,耗尽型MOSFET,耗尽型功率MOSFET,超结功率MOSFET,超结功率MOSFET,超结技术功率MOSFET,通过AEC-Q100认证的低端栅极驱动器,通过汽车级AECQ101认证的SCR,闸线、硅胶套电缆,限流SSR,高压XPT™ IGBT,高温SCR,高端门驱动器IC, LOAD-BIASED GATE DRIVER, SILICON-CONTROLLED RECTIFIERS, SILICONE SLEEVE CABLE,1 PHASE HIGH VOLTAGE RECTIFIER MODULES,1 PHASE RECTIFIER BRIDGES,3 PHASE HIGH VOLTAGE RECTIFIER MODULES,3 PHASE RECTIFIER BRIDGES,3-PHASE HALF-BRIDGE GATE DRIVER IC,3-PHASE HALF-BRIDGE GATE DRIVER ICS,AC CONTROLLER,AC REGULATORS,AEC-Q100-QUALIFIED LOW-SIDE GATE DRIVERS,ASYMMETRIC AND PULSE THYRISTORS,ASYMMETRIC THYRISTORS,AUTOMOTIVE GRADE AECQ101 QUALIFIED SCRS,AVALANCHE DIODE,AVALANCHE DIODES,BAR CLAMPS,BJT,BOX CLAMPS,BRAKE BUCK BOOST CHOPPER IGBT MODULES,BRAKING RECTIFIER ASSEMBLIES,BREAKOVER DIODES,CAPSULE DEVICES,CBI IGBT MODULES,CONTROL IC,COOLERS,CURRENT LIMITING SSRS,DEPLETION MODE MOSFET,DEPLETION MODE POWER MOSFETS,DEPLETION MOSFETS,DEPLETION-MODE MOSFET,DIODE,DIODE MODULES,DIODES,DIODES MODULES,DISTRIBUTED GATE THYRISTORS,DUAL ULTRAFAST DIODES,EXTENDED FBSOA LINEAR POWER MOSFET,EXTRA FAST RECOVERY DIODES,FAST BREAK-OVER DIODES,FAST DIODES,FAST PHASE CONTROL THYRISTORS,FAST RECOVERY DIODE,FAST RECOVERY DIODES,FAST RECOVERY EPITAXIAL DIODES,FAST SWITCHING THYRISTORS,FAST THYRISTOR,FAST TURN OFF THYRISTORS,FAST TURN-OFF THYRISTORS,FAST XPT™ IGBT,FETS,FRED,FRED DIODE,FRED DIODES,FRED MODULES,GATE DRIVER IC,GATE DRIVER ICS,GATE TURN OFF THYRISTORS,GATE TURN-OFF THYRISTORS,GATE WIRE,GEN4 XPT™ IGBT,GEN4™ XPT™ IGBT,GEN4™XPT™IGBT,GTO,GTO THYRISTORS,HALF-BRIDGE GATE DRIVER IC,HALF-BRIDGE GATE DRIVER ICS,HALF-BRIDGE GATE DRIVERS,HALF-WAVE,HEATSINKS,HIGH EFFICIENCY SCR,HIGH POWER DEVICES,HIGH TEMPERATURE SCR,HIGH TEMPERATURE SCRS,HIGH TEMPERATURE TRIAC,HIGH TEMPERATURE TRIACS,HIGH VOLTAGE IGBT,HIGH VOLTAGE MOSFET,HIGH VOLTAGE POWER MOSFET,HIGH VOLTAGE XPT™ IGBT,HIGH-POWER SONIC FRD,HIGH-SIDE GATE DRIVER ICS,HIPERDYN™ FRED,HIPERFRED 2TM DIODES,HIPERFRED™ DIODES,HIPERFRED™ MODULES,IC DIVISION LINEAR OPTOCOUPLERS,IGBT DISCRETE,IGBT DISCRETES,IGBT GATE DRIVER,IGBT MODULES,IGBT XPT™ MODULES,INSULATED GATE BI-POLAR TRANSISTORS,LEGACY POWER MOSFET,LINE RECTIFIER,LINEAR OPTOCOUPLERS,LINEAR™ POWER MOSFET,LOW-POWER CONSUMPTION DRIVER,LOW-SIDE GATE DRIVER ICS,LOW-SIDE GATE DRIVERS,MBR,MEDIUM VOLTAGE THYRISTORS,METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR,MOS-GATED THYRISTORS,MOSFET,N-CHANNEL DEPLETION MODE FET,N-CHANNEL DEPLETION MODE FETS,N-CHANNEL DEPLETION MODE FIELD EFFECT TRANSISTORS,OPTICALLY ISOLATED,OPTICALLY ISOLATED AC POWER SWITCHES,OPTICALLY ISOLATED LOAD-BIASED GATE DRIVER,OPTICALLY ISOLATED LOAD-BIASED GATE DRIVERS,OPTICALLY ISOLATED PHOTOVOLTAIC GATE DRIVERS,OPTICALLY-ISOLATED AC POWER SWITCHES,P-CHANNEL POLARP™ POWER MOSFET,P-CHANNEL TRENCHP™ POWER MOSFET,PHASE CONTROL THYRISTORS,PLANAR IGBT,POLAR3™ HIGH VOLTAGE MOSFET,POLARP2™ POWER MOSFET,POLARP3™ HIPERFETTM POWER MOSFET,POLARP3™ HIPERFET™ POWER MOSFET,POLARP3™ POWER MOSFET,POLARP™ P-CHANNEL POWER MOSFET,POLAR™ HIPERFET ™ MOSFET,POLAR™ POWER MOSFET,POLAR™ STANDARD MOSFET,POLAR™HIPERFET™MOSFET,POWER IC,POWER MOSFET,POWER SEMICONDUCTOR,POWER SEMICONDUCTOR MODULES,POWER SWITCHES,PRESS-PACK IGBTS,PULSE THYRISTORS,Q3-CLASS HIPERFET™ MOSFET,Q3-CLASS HIPERFET™ POWER MOSFET,RECTIFIER,RECTIFIER BRIDGES,RECTIFIER DIODES,RECTIFIER MODULES,RELAYS,REVERSE CONDUCTING IGBTS,SBD,SCHOTTKY BARRIER DIODE,SCHOTTKY DIODES,SCHOTTKY GEN DIODES,SCR,SEMIFAST DIODES,SIC DIODES,SIC MOSFET,SIC MOSFET,SIC MOSFETS,SIC SCHOTTKY BARRIER DIODES,SIDAC,SILICON CARBIDE SCHOTTKY BARRIER DIODES,SILICON CARBIDE SCHOTTKY DIODES,SILICON CARBIDE SCHOTTKY DIODES DISCRETE,SILICONE SLEEVE CABLE,SINGLE CO-AXIAL CABLE,SINGLE PRE-MOUNTED DIODES,SINGLE PRE-MOUNTED THYRISTORS,SINGLE-PHASE DIODE BRIDGES,SINGLE-PHASE FULLY CONTROLLED BRIDGES,SINGLE-SIDE COOLED SQUARE BASE MOUNTING CLAMPS,SIX-PACK IGBT MODULES,SIX-PHASE DIODE,SIX-PHASE THYRISTOR,SOFT RECOVERY DIODES,SOLID STATE RELAYS,SOLID STATE SWITCHES,SONIC DIODE,SONIC FRDS,SONIC-FRDTM DIODES,STANDARD BAR CLAMP KITS,STANDARD BAR CLAMPS,STANDARD MOSFET,STANDARD PHASE CONTROL THYRISTORS,STANDARD POWER MOSFET,STANDARD SCRS,STANDARD THYRISTOR,SUPERJUNCTION POWER MOSFET,SURFACE MOUNT DEVICE,SURGE-VOLTAGE-PROOF RECTIFIER DIODES,SWITCHING THYRISTORS,THREE-PHASE DIODE BRIDGES,THREE-PHASE FULLY CONTROLLED BRIDGES,THYRISTOR,THYRISTOR MODULES,THYRISTORS,TRADITIONAL SCHOTTKY,TRENCH IGBT,TRENCH POWER MOSFET,TRENCHP™ P-CHANNEL POWER MOSFET,TRENCHT2TM POWER MOSFET,TRENCHT2™ HIPERFET™ POWER MOSFET,TRENCHT2™ MOSFET,TRENCHT2™MOSFET,TRIAC,TRIAC,TRIODE,TWISTED PAIR,ULTRA FAST AND ULTRA SOFT RECOVERY DIODE,ULTRA JUNCTION POWER MOSFET,ULTRAJUNCTION TECHNOLOGY POWER MOSFET,VERY HIGH VOLTAGE NPT IGBTS,VERY HIGH VOLTAGE POWER MOSFET,VHV MOSFET,VHV MOSFETS,XPT VERY HIGH VOLTAGE IGBTS,XPT™ IGBT,XPT™ PLANAR IGBTS,XPT™ TRENCH IGBTS,XPT™IGBT,IXTR20P50P,IXFX 180N10,IXXH80N65B4H1,IXFA14N60P,IXTA8N65X2,IXFH16N60P3,DSP8-12A,IXTH440N055T2,DSS16-01AS,IXFK48N60Q3,DSEP...,IXFN360N15T2,MIXG240RF120,不间断电源,产业,仪表,伺服电机控制,医用传感器,医疗设备,压缩机电机,可再生发电,器具,多路复用器,安防,工业控制,工业用传感器,工业电源逆变器,感应烹饪,感应电源,数据通信仪表,数据采集,无线通讯,无绳电动工具,机器人,模式电源开关,水,水泵,水电大坝,泵电动机,海上风车,燃气,电力电子系统,电子开关,电机控制,电源反馈,病人隔离,白色商品,直流充电站,空调,米,脉冲功率,设备隔离,车载充电器,过程控制传感器,逆变器,隐藏,隔离式浮地电源,雄蜂,风扇,风扇电机,马达,高强度放电照明,高频变换器,高频开关控制,高频逆变器,AC/DC转换器,DC-DC转换器,DC/DC转换器,D类功率放大器,D类开关放大器,I/O子系统,RCD缓冲器,交流/直流逆变器,高效功率MOSFET开关,AC INDUSTRIAL DRIVES,AC/DC CONVERTERS,AC/DC-INVERTERS,AIR CONDITIONERS,APPLIANCES,BATTERY CHARGERS,CAMERA,CLASS-D POWER AMPLIFIERS,CLASS-D SWITCHING AMPLIFIERS,COMPRESSOR MOTORS,CONVERTERS,CORDLESS POWER TOOLS,DATA ACQUISITION,DATA COMMUNICATIONS,DATA COMMUNICATIONS INSTRUMENTATION,DC CHARGING STATION,DC CHOPPER DRIVES,DC-TO-DC CONVERTERS,DC/DC CONVERTERS,DRONES,EFFICIENT POWER MOSFET SWITCHING,ELECTRONIC SWITCHING,EQUIPMENT ISOLATION,FAN MOTORS,FANS,FLASH UNITS,GAS,HID,HIGH FREQUENCY CONVERTERS,HIGH FREQUENCY INVERTERS,HIGH INTENSITY DISCHARGE LIGHTING,HIGH-FREQUENCY SWITCHING CONTROL,HYDROELECTRIC DAMS,I/O SUBSYSTEMS,IGBT SWITCHING,INDUCTION COOKING,INDUCTION POWER SUPPLIES,INDUSTRIAL,INDUSTRIAL CONTROLS,INDUSTRIAL POWER INVERTERS,INDUSTRIAL SENSORS,INDUSTRY,INSTRUMENTATION,INVERTER,ISOLATED FLOATING POWER SOURCES,MEDICAL EQUIPMENT,MEDICAL EQUIPMENT,MEDICAL SENSORS,METERS,MOTOR,MOTOR CONTROLS,MOTOR CONTROLS,MULTIPLEXERS,OFFSHORE WINDMILLS,ON-BOARD CHARGER,PATIENT ISOLATION,POWER ELECTRONIC SYSTEMS,POWER SUPPLIES,POWER SUPPLY FEEDBACK,PROCESS CONTROL TRANSDUCERS,PULSE POWER,PULSE TRANSFORMER DRIVER,PUMP MOTORS,PUMPS,RCD SNUBBERS,RENEWABLE GENERATION,ROBOTICS,SECURITY,SERVO MOTOR CONTROL,SMOKE ALARMS,STEPPER MOTOR,STEPPER MOTOR,SWITCH MODE POWER SUPPLIES,TELECOMMUNICATIONS,TELECOMMUNICATIONS,UNINTERRUPTABLE POWER SUPPLIES,UPS,WATER,WHITE GOODS
【IC】Littelfuse用于SiC MOSFET和高功率IGBT的创新低侧栅极驱动器IX4352NE
Littelfuse宣布推出IX4352NE低侧SiC MOSFET和IGBT栅极驱动器。这款创新的驱动器专门设计用于驱动工业应用中的碳化硅（SiC）MOSFET和高功率绝缘栅双极晶体管（IGBT）。IX4352NE通过一种新型9A拉/灌电流驱动器扩展了我们广泛的低侧栅极驱动器系列，简化了SiC MOSFET所需的栅极驱动电路。
Littelfuse新型1300V A5A沟槽分立式IGBT，专为800V电动汽车应用设计
随着汽车行业向更高电压架构的电动汽车转变，硅IGBT对于要求较低开关频率和最小传导损耗的应用仍然至关重要。Littelfuse的1300V A级沟槽式IGBT系列可满足800V BEV子系统的特殊需求，特别是在PTC加热器、放电电路和预充电应用中。这些IGBT具有低VCE（饱和）、短路能力和宽电流范围。同时提供SMD和插件封装，具有更强的爬电和电气距离，为设计提供了灵活性。
Littelfuse MOSFET、IGBT、多芯片和功率双极分立器件的产品变更通知（LFPCN-DMI-BTA-2024-003/02）
Littelfuse发布产品变更通知，为应对欧盟对二氯甲烷禁止令，已对受影响的无氯二极管、MOSFET、IGBT、多芯片和功率双极性离散器件的环氧树脂封装材料进行了替代。新材料已通过可靠性测试，不影响产品外形、尺寸和功能。受影响的产品将从2025年2月26日起使用新材料。
LITTELFUSE - IGBT,功率双极分立器件,多芯片分立器件,分立MOSFET,离散IGBT,DISCRETE IGBTS,DISCRETE MOSFETS,MOSFET,MULTICHIP DISCRETE DEVICES,POWER BIPOLAR DISCRETE DEVICES,IXTA16N50P-TRL,IXFA14N60P,IXTA8N65X2,IXXH80N65B4H1,IXFH16N60P3,IXFH80N65X2W,IXTH440N055T2,IXFK120N60X3,IXTA3N150HV-TRL,IXFK48N60Q3,IXFN360N15T2,IXFK90
请问IGBT，VGE最大±20V，驱动电压15V，我是应该选择15V的VC=24.4的，还是VC=20的SMBJ12CA，选型时应该以哪个参数为准呢？
您好，在驱动电压为15V情况下，标称12V的会使得TVS处于触发状态，而标称15V的处于临界值，会因电源供电不稳，导致TVS管触发；如果驱动电压为15V，建议采用标称VR=16V的TVS管，可选用力特的双向TVS 管SMBJ16CA，器件资料：Littelfuse（力特） TVS二极管SMBJ数据手册；设计可参考以下链接：【经验】双向TVS管在IGBT门极驱动电路中的功能分析及选型
Littelfuse产品变更通知：为TO-268-3分立式IGBT增加内部第二个源（LFPCN-DI-BTA-2025-001/01）
Littelfuse发布产品变更通知，宣布在其内部组装单位SBU-Lipa，菲律宾增加TO-268-3离散型IGBT的后端制造的第二供应商。此变更旨在缓解现有OSAT的产能限制，并增加额外产能，以更有效地支持客户需求。通知中包含设备标记、内箱和管标签的变更描述，以及可靠性数据摘要和受影响零件号列表。Littelfuse不预期受影响零件的形态/尺寸/功能将发生变化。
LITTELFUSE - IGBT,离散IGBT,DISCRETE IGBTS,IXGT64N60B3-TRL,IXGT72N60A3,IXGT60N60C3D1,IXGT10N170A,IXBT2N250-TR,IXGT16N170A,IXBT16N170A,IXBT42N170,IXGT40N120B2D1,IXGT16N170,IXA4IF1200TC-TRL*,IXBT
Littelfuse IX4351NE SiC MOSFET ＆ IGBT Driver Wins Annual Power Product Award
Littelfuse component recognized for its superior green energy savings performance.CHICAGO, December 3, 2020 - Littelfuse, Inc. today announced its IX4351NE SiC MOSFET and IGBT Driver has been named a Green Energy Award Winner for 21ic.com’s 2020 Annual Power Product Awards. Held for the last 17 years, these awards recognize and honor the best products throughout the world that succeed in energy conservation and environmental protection.
Littelfuse点火IGBT，每年超过2000万辆新车使用，可承受300mJ雪崩效应能量
Littelfuse是汽车防护设备的领先制造商，在点火系统方面拥有强大的实力。每年有超过2000万辆新车使用我们的点火IGBT。 Littelfuse点火IGBT管理和控制线圈两端的电流，以产生精确的火花。它们包含一个集成箝位结构和硅中栅极ESD保护装置。点火IGBT可提供极低的饱和电压。 点火IGBT可经受高达300 mJ的雪崩效应能量，足以应对最糟糕的状况（如二次侧开路或火花塞损坏）。
ISOPLUS-SMPD中Littelfuse IGBT半桥和升压电路的产品终止通知（LFPTN250205SXC）
Littelfuse发布产品终止通知，宣布将停止供应部分IGBT半桥和升压电路产品。受影响的产品包括IXA20PG1200DHG系列等，终止原因是为这些设备使用的芯片供应中断。部分产品允许最后一次购买，截止日期为2025年3月31日，最后交货日期为2026年12月16日。预计2026年中将推出新产品。
LITTELFUSE - IGBT半桥,升压电路,IGBT升压器,IGBT半桥共封装,BOOST CIRCUITS,IGBT BOOSTER,IGBT HALF BRIDGE,IGBT HALF BRIDGE CO-PACK,IXB30PG1200DHGLA-ELA,IXA40PG1200DHG-TUB,IXA20RG1200DHG-TRR,IXA30PG1200DHG-TUB,IX519828,IXA20PG1200DHGLB,IXA20RG1200DHGLA-ELA,IXA30RG1200DHG-TUB,IXA40P
|
|
|
电子商城
现货市场
服务
定制液冷板尺寸5mm*5mm~3m*1.8m，厚度2mm-100mm，单相液冷板散热能力最高300W/cm²。
最小起订量： 1片 提交需求>
可定制高压电源模块的输入电压100VDC-2000VDC、功率范围5W-500W/4W-60W； 高压输出电源模块的输出电压100VDC-2000VDC。功率范围：4W-60W。
提交需求>